PART |
Description |
Maker |
FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET 1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFAG50 IRFAG50-15 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package HEXFET?TRANSISTORS 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Simple Drive Requirements
|
International Rectifier
|
IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
STW8NB100 6509 |
N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET From old datasheet system N - CHANNEL 1000V - 1.2 - 8A - TO-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
HGTG20N100D2 |
20A, 1000V N-Channel IGBT 34 A, 1000 V, N-CHANNEL IGBT, TO-247 20A/ 1000V N-Channel IGBT
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
AOK5N100 |
1000V,4A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
HGTG34N100E2 |
34A/ 1000V N-Channel IGBT 34A, 1000V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
STW8NB100 |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
|
SGS Thomson Microelectronics
|
RF1S4N100SM RFP4N100 |
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
|
Fairchild Semiconductor
|